Cr4 +: YAG Crystals


  • Magaca Alaabta:Cr4+: Y3Al5O12
  • Qaab dhismeedka Crystal:Kuub
  • Heerka Dopant:0.5mol-3mol%
  • Moh Hardness:8.5
  • Tusmada Dib-u-celinta:1.82@1064nm
  • Hanuuninta: < 100>gudaha 5° ama gudaha 5°
  • Isku-dhafka nuugista bilowga ah:Isku-dhafka nuugista bilowga ah
  • Gudbinta hore:3% ~ 98%
  • Faahfaahinta Alaabta

    Xuduudaha farsamada

    Warbixinta tijaabada

    Cr4 +: YAG waa qalab ku habboon Q-isbeddelka Nd: YAG iyo Nd iyo Yb kale oo lasers ah oo dhererkiisu yahay 0.8 ilaa 1.2um. Waa xasillooni iyo isku halleyn heer sare ah, nolol dheer oo adeeg ah iyo heerka dhaawaca sare.
    Faa'iidooyinka Cr4+: YAG
    • Degganaanshiyo kiimikaad oo sarreeya iyo isku halaynta
    • In ay fududahay in lagu qalo
    • Xadka burburka sarreeya (> 500MW/cm2)
    • Sida awood sare, xaalad adag iyo Q-Switch is haysta
    • Wakhtiga cimriga dheer iyo kulaylka wanaagsan
    Guryaha aasaasiga ah:
    • Cr 4+ :YAG waxay muujisay in ballaca garaaca wadnaha ee laysarrada Q-switched ee aan fiicneyn uu noqon karo mid gaaban sida 5ns ee diode lagu shubay Nd:YAG lasers iyo ku celcelinta ilaa 10kHz ee diode lagu shubay Nd:YVO4 lasers.Intaa waxaa dheer, wax soo saar cagaaran oo hufan @ 532nm, iyo wax soo saarka UV @ 355nm iyo 266nm ayaa la soo saaray, ka dib markii xigay intracavity SHG ee KTP ama LBO, THG iyo 4HG ee LBO iyo BBO ee diode bamgareeyay iyo Q-switched Nd: YAG iyo Nd: YVO4lasers.
    • Cr 4+: YAG sidoo kale waa crystal laser leh wax soo saar la hagaajin karo laga bilaabo 1.35 µm ilaa 1.55 µm.Waxay dhalin kartaa laysarka garaaca wadnaha ee ultrashort (ilaa fs pulsed) marka lagu shubo Nd: YAG laser at 1.064 µm.

    Cabbirka: 3 ~ 20mm, H × W: 3 × 3 ~ 20 × 20mm Marka la codsado macmiilka
    Dulqaadyada cabbirka: Dhexroorka Dhexroorka: ± 0.05mm, dhererka: ± 0.5mm
    dhammayn foosto Dhamaadka dhulka 400#Gmt
    Isbarbar yaac ≤ 20″
    Si toos ah ≤ 15′′
    Fiican <λ/10
    Tayada dusha sare 20/10 (MIL-O-13830A)
    Mawjada dhererka 950nm ~ 1100nm
    Milicsiga Dahaarka AR ≤ 0.2% (@1064nm)
    heerka dhaawaca ≥ 500MW/cm2 10ns 1Hz at 1064nm
    Chamfer <0.1 mm @ 45°

    ZnGeP201