Crystals LGS


  • Foomka Kiimikada:La3Ga5SiQ14
  • Cufnaanta:5.75g/cm3
  • Meesha dhalaalaysa:1470 ℃
  • Xadka Hufnaanta:242-3200nm
  • Tusmada Dib-u-celinta:1.89
  • Isku-xidhayaasha Electro-Optic:γ41=1.8pm/V,γ11=2.3pm/V
  • iska caabin1.7x1010Ω.cm
  • Isku xidhka Balaadhinta kulaylka:α11=5.15x10-6/K(⊥Z-dhidibka);α33=3.65x10-6/K(∥Z- dhidibka)
  • Faahfaahinta Alaabta

    Guryaha aasaasiga ah

    La3Ga5SiO14 crystal (LGS crystal) waa shay aan toos ahayn oo indho-indhayn ah oo leh heer-burbur sare, koronto-muuqaal sare iyo wax-qabad koronto-optical oo aad u fiican.LGS crystal waxaa iska leh qaab dhismeedka nidaamka trigonal, iskudhafka ballaarinta kulaylka yar, ballaarinta kulaylka anisotropy of crystal waa daciif, heerkulka xasiloonida heerkulka sare waa wanaagsan yahay (ka fiican SiO2), oo leh laba electro- madax-bannaan coefficients indhaha ayaa u fiican sida kuwa BBO KiristaaloIsku-xireyaasha korantada-optic-ga waxay ku xasilan yihiin heerkul ballaaran oo kala duwan.Karistanku waxa uu leeyahay sifooyin farsamo oo wanaagsan, ma laha wax dillaac ah, malaha wax-ka-soo-baxa, xasilloonida jireed iyo waxa uu leeyahay waxqabad dhammaystiran oo aad u wanaagsan.crystal LGS leeyahay band gudbinta ballaaran, ka 242nm-3550nm uu leeyahay heerka gudbinta sare.Waxa loo isticmaali karaa habaynta EO iyo EO Q-Switchs.

    LGS crystal waxay leedahay codsiyo kala duwan oo kala duwan: marka lagu daro saamaynta piezoelectric, saamaynta wareegga indhaha, waxqabadkeeda elektiroonigga ah sidoo kale waa mid aad u sarreeya, LGS Pockels Unugyada waxay leeyihiin soo noqnoqoshada sare ee soo noqnoqda, qaybta weyn ee daloolka, xajmiga garaaca wadnaha cidhiidhi ah, awood sare, ultra Heerkulka hooseeya iyo xaaladaha kale waxay ku habboon yihiin LGS crystal EO Q -switch.Waxaan codsanay isku-dhafka EO ee γ 11 si loo sameeyo unugyada LGS Pockels, waxaanan doorannay saamigeeda weyn si loo dhimo korantada nuska ah ee unugyada Electro-optical LGS, taas oo ku habboon hagaajinta korantada indhaha ee dhammaan - Solid-state. leysarka oo leh heerar koronto oo sarreeya.Tusaale ahaan, waxaa lagu dabaqi karaa LD Nd: YVO4 laser-state adag oo lagu shubay koronto dhexdhexaad ah iyo tamar ka badan 100W, oo leh heerka ugu sarreeya ilaa 200KHZ, wax soo saarka ugu sarreeya ilaa 715w, xajmiga garaaca wadnaha ilaa 46ns, joogto ah wax soo saarka ilaa ku dhawaad ​​10w, iyo heerka waxyeelada indhaha ayaa 9-10 jeer ka sareeya kan kristal LiNbO3.1/2 korantada hirarka iyo 1/4 korantada hirarku waxay ka hooseeyaan kuwa isku midka ah ee isku midka ah ee BBO Pockels Cells, iyo qiimaha alaabta iyo ururkuba way ka hooseeyaan kuwa isku midka ah ee RTP Pockels Cells.Marka la barbardhigo Unugyada Pockels DKDP, waa kuwo aan xal ahayn waxayna leeyihiin xasillooni heerkul wanaagsan.LGS Electro-optical Unugyada waxaa loo isticmaali karaa deegaan qallafsan waxayna si fiican u qaban karaan codsiyo kala duwan.

    Foomamka Kiimikada La3Ga5SiQ14
    Cufnaanta 5.75g/cm3
    Meesha dhalaalaysa 1470 ℃
    Kala duwanaanta daahfurnaanta 242-3200nm
    Tusmada Dib-u-celinta 1.89
    Isku-xireyaasha Electro-Optic γ41=1.8pm/V,γ11=2.3pm/V
    iska caabin 1.7×1010Ω.cm
    Xidhiidhiyayaasha Balaadhinta kulaylka α11=5.15×10-6/K(⊥Z-dhidibka);α33=3.65×10-6/K(∥Z- dhidibka)