Kiristaalo LGS


  • Foomka Kiimikada: La3Ga5SiQ14
  • Cufnaanta: 5.75g / cm3
  • Barta Dhalaalka: 1470 ℃
  • Range Transparency: 242-3200nm
  • Tusmo milicsan: 1.89
  • Koronto Koronto: γ41 = 1.8pm / V , γ11 = 2.3pm / V
  • Iska caabin 1.7x1010Ω.cm
  • Isugeynta Fidinta Kuleylka: -11 = 5.15x10-6 / K (⊥Z-dhidibka); α33 = 3.65x10-6 / K (∥Z-dhidibka)
  • Faahfaahinta alaabta

    Guryaha aasaasiga ah

    La3Ga5SiO14 crystal (LGS crystal) waa shey aan toos ahayn oo toos ah oo leh xadka burburka sare, isku dheelitirka elektaroonigga sare iyo waxqabadka elektroonikada wanaagsan. LGS crystal waxaa iska leh qaabdhismeedka nidaamka trigonal, isugeyn yar kuleylka balaarinta kuleylka, anisotropy balaarinta kuleylka ee crystal waa daciif, heerkulka xasiloonida heerkulka sare wuu fiicanyahay (wuu kafiican yahay SiO2), oo leh laba koronto oo madax banaan oo koronto leh ayaa ufiican sida kuwa BBO Kiristaalo. Iskuduwaha korantada elektaroonigga ah ayaa ku xasilan heerkullo kala duwan. Quruuradu waxay leedahay astaamo farsamo oo wanaagsan, kala furfurnaan la'aan, majiro la'aan, xasiloonida jimicsiga jirka waxayna leedahay waxqabad aad ufiican oo dhameystiran Macluumaadka 'LGS crystal' wuxuu leeyahay fareebo ballaadhan, laga bilaabo 242nm-3550nm wuxuu leeyahay heerka gudbinta sare. Waxaa loo isticmaali karaa isbeddelka EO iyo EO Q-Switches.

    LGS crystal waxay leedahay codsiyo kala duwan: marka lagu daro saameynta piezoelectric, saameynta wareegga indhaha, waxqabadka saameynta elektaroonigga ah sidoo kale waa mid aad u sarreeya, LGS Pockels Unugyada waxay leeyihiin soo noqnoqosho soo noqnoqota, furitaanka qaybta ballaaran, baaxadda garaaca wadnaha oo cidhiidhi ah, awood sare, ultra - heerkulka hoose iyo xaaladaha kale ayaa ku habboon LGS crystal EO Q -switch. Waxaan adeegsanay isku dheelitirka EO ee γ 11 si aan u sameysano unugyada LGS Pockels, waxaanan dooranay saamigeeda weyn si loo yareeyo kala bar korantada unugyada LGS Electro-optical, taas oo ku haboonaan karta isugeynta elektarooniga ah ee dhammaan-Solid-state laser oo leh heerar ku celcelin awood sare leh. Tusaale ahaan, waxaa lagu dabaqi karaa LD Nd: YVO4 laser-adag oo dawladeed oo lagu soo saaray awood dhexdhexaad ah iyo tamar ka badan 100W, oo leh heerka ugu sarreeya illaa 200KHZ, soosaarka ugu sarreeya illaa 715w, ballaca garaaca wadnaha illaa 46ns, si joogto ah soo saar illaa ku dhowaad 10w, iyo soohdinta waxyeelada indhaha waa 9-10 jeer ka sarreysa tan crystal LiNbO3. 1/2 danab mawjadaha iyo 1/4 danab mawjadaha ayaa ka hooseeya kan isla halbeegga ah unugyada 'BBO Pockels Cells', iyo qiimaha maaddada iyo shirarka ayaa ka hooseeya kan isla mitirka ah ee 'RTP Pockels Cells'. Marka loo barbardhigo unugyada 'DKDP Pockels Cells', iyagu ma ahan kuwa xalka leh waxayna leeyihiin xasilooni heerkul wanaagsan. LGS Electro-optical Unugyada waxaa loo isticmaali karaa jawi qalafsan waxayna si wanaagsan ugu shaqeyn karaan codsiyada kala duwan.

    Foomka Kiimikada La3Ga5SiQ14
    Cufnaanta 5.75g / cm3
    Barta Dhalaalka 1470 ℃
    Range Transparency 242-3200nm
    Tusmo Refractive Index 1.89
    Koronto koronto leh γ41 = 1.8 pm / Vγ11 = 2.3 pm / V
    Iska caabin 1.7 × 1010Ω.cm
    Isukeenistayaasha Ballaarinta Kuleylka -11 = 5.15 × 10-6 / K (⊥Z-dhidibka); α33 = 3.65 × 10-6 / K (-Z-dhidibka)