• GaP

    GAP

    Gallium phosphide (GaP) crystal waa qalab indhaha infrared leh engegnaan dusha sare, conductivity kaamerada sare iyo gudbinta band ballaaran.

  • ZnTe Crystal

    ZnTe Crystal

    Zinc Telluride waa maaddo kiimiko ah oo ikhtiyaar ah oo leh qaaciddada ZnTe.

  • Cr2+: ZnSe

    Cr2+: ZnSe

    Cr²+: ZnSe nuugiyaasha la isku halleyn karo (SA) ayaa ah agabyo ku habboon furayaasha Q-furayaasha ee fiyuus-il-badbaado leh iyo lasers-state-ka adag ee ka hawlgala baaxadda muuqaalka ee 1.5-2.1 μm.

  • ZnGeP2 Crystals

    Crystals ZnGeP2

    Kiristaalo ZGP oo leh isku-duwayaal waaweyn oo aan toos ahayn (d36 = 75pm/V), baaxad ballaaran oo hufan oo infrared (0.75-12μm), kuleyl aad u sarreeya (0.35W/(cm · K)), xadka dhaawaca leysarka sare (2-5J/cm2) iyo Hantida si fiican u farsameysan, crystal ZnGeP2 waxaa loogu yeeraa boqorkii kiristaalo indho -indhayn ah oo infrared ah oo wali ah walxaha beddelka soo noqnoqda ee ugu wanaagsan ee awoodda sare leh, jiilka laydhka infrared -ka la hagaajin karo. Waxaan bixin karnaa tayo sare oo indhaha ah iyo dhexroor ballaaran oo kiristaalo ZGP ah oo leh isugeyn nuugid aad u hooseysa α <0.05 cm-1 (oo ku socota mowjadaha bamka 2.0-2.1 µm), kaas oo loo adeegsan karo in lagu soo saaro laser-ka la-beddeli karo ee dhexdhexaadka ah oo leh wax-qabad sare iyada oo loo marayo OPO ama OPA hababka.

  • AgGaS2 Crystals

    AgGaS2 Crystals

    AGS waa hufnaan laga bilaabo 0.50 ilaa 13.2 µm. In kasta oo isku -dheelitirnaanta aan tooska ahayn ee ugu liidata ay ka mid tahay kiristaalo infrared -ka la soo sheegay, daahfurnaanta dhererka dhererka dhererkiisu yahay 550 nm ayaa loo adeegsadaa OPO -yada ay soo riixdo Nd: YAG laser; kala duwanaansho fara badan oo isku -dhafan oo isku -dhafan oo leh diode, Ti: Sapphire, Nd: YAG iyo lasers dheeha IR oo daboolaya 3-12 µm; nidaamyada cabbirka tooska ah ee infrared -ka tooska ah, iyo SHG ee laser CO2. Taargooyinka khafiifka ah ee AgGaS2 (AGS) ayaa caan ku ah jiilka garaaca wadnaha ee ultrashort -ka ee badhtamaha IR iyada oo farqiga soo noqnoqoshada shaqaalaynta NIR hirarka.

  • AgGaSe2 Crystals

    AgGaSe2 Crystals

    AGSe Kiristaalo AgGaSe2 waxay leeyihiin cidhifyo kooxeed 0.73 iyo 18 µm. Baaxaddiisa gudbinta ee waxtarka leh (0.9–16 µm) iyo kartida is -waafajinta ballaadhan waxay siisaa fursad aad u wanaagsan codsiyada OPO marka lagu shubo noocyo kala duwan oo leysarka. Ku -hagaajinta gudaha 2.5–12 µm ayaa la helay markii lagu shubayo Ho: YLF laser at 2.05 µm; iyo sidoo kale hawlgalka is-waafajinta wajiga aan muhiimka ahayn (NCPM) gudaha 1.9–5.5 µm marka lagu shubayo 1.4-1.55 µm. AgGaSe2 (AgGaSe2) ayaa loo muujiyey inuu yahay kristal laba jibbaaran oo hufan oo shucaaca shucaaca CO2 infrared.

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