• ZnGeP2 Crystals

    ZnGeP2 Crystals

    Kiristaalo ZGP oo haysta iskudhafyo waaweyn oo aan toos ahayn (d36=75pm/V), kala duwanaansho hufnaan infrared balaadhan ah (0.75-12μm), kulaylka sare (0.35W/(cm · K)), heerka waxyeelada laysarka sare (2-5J/cm2) iyo si fiican u makiinado hantida, crystal ZnGeP2 waxaa loogu yeedhi jiray boqorka infrared kiristaalo aan toos ahayn oo weli ah wax beddelka inta jeer ee ugu fiican ee awoodda sare, la hagaajin karo jiilka infrared infrared.Waxaan bixin karnaa tayada sare ee indhaha iyo dhexroorka ZGP kiristaalo oo leh isugeyn aad u hooseeya oo nuugista α <0.05 cm-1 hababka.

  • AgGaS2 crystals

    AgGaS2 crystals

    AGS waa hufan laga bilaabo 0.50 ilaa 13.2 µm.In kasta oo isku-dheellitirkeeda indho-indheynta aan tooska ahayn uu yahay kan ugu hooseeya ee ka mid ah kiristaalo infrared-ka ee la sheegay, daah-furnaanta hirarka gaaban ee dhererka sare ee 550 nm ayaa lagu sameeyay isticmaalka OPO-yada ay ku shubto Nd:YAG laser;Tijaabooyin isku dhafan oo kala duwan oo badan oo kala duwan oo isku dhafan oo leh diode, Ti: Sapphire, Nd: YAG iyo IR dheeha leysarka oo daboolaya kala duwanaanta 3-12 µm;Nidaamyada cabbiraadda tooska ah ee infrared, iyo SHG ee CO2 laser.Taarikada khafiifka ah ee AgGaS2 (AGS) waxay caan ku yihiin jiilka garaaca wadnaha ee ultrashort ee dhexda IR kala duwanaanshaha jiilka soo noqnoqda ee isticmaalaya garaacyada hirarka hirarka NIR.

  • AgGaSe2 Crystals

    AgGaSe2 Crystals

    AGseKiristaalo AgGaSe2 waxay leeyihiin cidhifyada 0.73 iyo 18 µm.Xajmiga gudbinta faa'iidada leh (0.9-16 µm) iyo awoodda isbarbardhigga wejiga ballaaran waxay siinaysaa karti aad u wanaagsan codsiyada OPO marka lagu shubo noocyo kala duwan oo leysarka ah.Ku-habaynta gudaha 2.5-12 µm ayaa la helay marka lagu shubayo Ho:YLF laser at 2.05 µm;iyo sidoo kale hawlgalka iswaafajinta aan muhiimka ahayn (NCPM) ee gudaha 1.9-5.5 µm marka lagu shubayo 1.4-1.55 µm.AgGaSe2 (AgGaSe2) ayaa lagu muujiyay inuu yahay soo noqnoqda wax ku ool ah oo labanlaabmaya crystals ee shucaaca CO2 ee infrared.

  • BaGa4Se7 Crystals

    BaGa4Se7 Crystals

    Karistaanka tayada sare leh ee BGse (BaGa4Se7) waa analoogga selenide ee isku dhafka chalcogenide BaGa4S7, kaas oo qaabdhismeedkiisa acentric orthorhombic lagu aqoonsaday 1983 iyo saamaynta IR NLO ayaa la soo sheegay 2009, waa crystal IR NLO cusub.Waxaa lagu helay farsamada Bridgman-Stockbarger.crystal Tani waxay muujinaysaa gudbinta sare ee baaxadda ballaaran ee 0.47-18 μm, marka laga reebo ugu sarreeya nuugista oo ku saabsan 15 μm.

  • GaSe Crystal

    GaSe Crystal

    Gallium Selenide (GaSe) oo aan toos ahayn oo hal crystal ah, oo isku daraysa isku xidhe weyn oo aan toos ahayn, heer dhaawac sare leh iyo cadad ballaadhan.Waa shay aad ugu habboon SHG gudaha IR-dhexe.

  • BaGa2GeSe6 Crystals

    BaGa2GeSe6 Crystals

    Crystal BaGa2GeSe6 waxay leedahay marin sare oo waxyeelo indhaha ah (110 MW/cm2), kala duwanaansho daah-furnaan ballaaran (laga bilaabo 0.5 ilaa 18 μm) iyo mid aan toos ahayn (d11 = 66 ± 15 pm / V), taas oo ka dhigaysa crystal-kan mid soo jiidasho leh isu beddelka inta jeer ee shucaaca laysarka u beddelo (ama gudaha) xadka IR-dhexe.

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