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  • Qalab:Si
  • Dulqaadka Dhexroorka:+0.0/-0.1mm
  • Dulqaadashada Dhumucda:±0.1mm
  • Xaqiijinta Dusha: λ/4@632.8nm 
  • Is barbar dhig: <1'
  • Tayada dusha sare:60-40
  • Nadiifi Aperture:>90%
  • Bevelling: <0.2×45°
  • Dahaarka:Naqshadaynta gaarka ah
  • Faahfaahinta Alaabta

    Qiyaasta Farsamada

    Warbixinta tijaabada

    Silikoon waa mono crystal horaan loo isticmaalo semi-conductor waana mid aan nuugi karin 1.2μm ilaa 6μm IR gobollada.Waxa halkan loo istcimaalayaa sidii qayb indhaha ah ee codsiyada gobolka IR.
    Silikoon waxa loo isticmaalaa sidii daaqad indhaha ah oo ugu horrayn 3 ilaa 5 micron band iyo sidii substrate soo saarista filtarrada indhaha.Baloogyo waaweyn oo Silikoon ah oo leh wejiyo dhalaalaya ayaa sidoo kale loo shaqaaleysiiyay bartilmaameedyada neutron-ka ee tijaabooyinka Fiisigiska.
    Silikoon waxaa beera farsamooyinka jiidista ee Czochralski (CZ) waxaana ku jira xoogaa ogsijiin ah oo sababa nuugista 9 microns.Si taas looga fogaado, Silikoon waxaa lagu diyaarin karaa habka loo yaqaan Float-Zone (FZ).Silikoonka indhaha guud ahaan si khafiif ah ayaa loo dulsaaray (5 ilaa 40 ohm cm) gudbinta ugu fiican ee ka sarreysa 10 microns.Silikoonku wuxuu leeyahay baas dheeri ah oo 30 ilaa 100 microns ah kaas oo wax ku ool u ah kaliya iska caabin aad u sarreeya oo aan magdhow lahayn.Doping inta badan waa boron (p-nooca) iyo Fosfooraska (n-nooca).
    Codsiga:
    Ku habboon codsiyada 1.2 ilaa 7 μm NIR
    • Broadband 3 ilaa 12 μm daahan ka-hortagga milicsiga
    Ku habboon codsiyada xasaasiga ah miisaanka
    Tilmaam:
    Daaqadahan silikoon kuma gudbiyaan 1µm ama ka hooseeya, sidaas darteed codsigeeda ugu weyn waa gobolada IR.
    • Sababtoo ah kuleylka kuleylka sarreeya, waxay ku habboon tahay in loo isticmaalo muraayadda leysarka awoodda sare leh
    ▶Daaqadaha silikoonku waxay leeyihiin bir dhalaalaysa;waxay ka tarjumaysaa oo nuugtaa laakiin kuma kala qaado gobollada muuqda.
    ▶ Milicsiga dusha sare ee daaqadaha Silicon waxay keenaysaa lumista gudbinta 53%.(xogta la qiyaasay 1 milicsiga korka 27%)

    Xadka Gudbinta: 1.2 ilaa 15 μm (1)
    Tusmada Dib-u-celinta: 3.4223 @ 5 μm (1) (2)
    Luminta Milicsiga: 46.2% at 5 μm (2 sagxad)
    Iskuxidhka Nuugista: 0.01 cm-1ku 3 μm
    Reststrahlen Peak : n/a
    dn/dT : 160 x 10-6/°C (3)
    dn/dμ = 0: 10.4 μm
    Cufnaanta: 2.33 g/cc
    Meesha dhalaalaysa 1420C
    Habdhaqanka Kulaylka: 163.3 W m-1 K-1iyo 273 K
    Balaadhinta kulaylka: 2.6 x 10-6/ at 20 ° C
    Adag: Tusmada 1150
    Awoodda kulaylka ee gaarka ah: 703 J Kg-1 K-1
    Dielectric Constant: 13 iyo 10 GHz
    Dhalinyarada Modulus (E): 131 GPA (4)
    Modulus Shear (G): 79.9 GPA (4)
    Modulus Bulk (K): 102 GPA
    Isku xidhka Laastikada: C11=167;C12=65;C44=80 (4)
    Xadka Laastikada Muuqda: 124.1MPa (18000 psi)
    Saamiga Sunta: 0.266 (4)
    Solubility Aan ku milmin Biyaha
    Miisaanka Molecular: 28.09
    Fasalka/Qaabka: Dheemman cubic, Fd3m

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