Crystals GSGG


  • Halabuurka:(Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12
  • Qaab dhismeedka Crystal:Cubic: a = 12.480 Å
  • Joogtada molecular wDielectric:968,096
  • Dhibic dhalaalaysa:~1730 oC
  • Cufnaanta:~ 7.09 g/cm3
  • Adag:~ 7.5 (bilood)
  • Tusmada dib-u-celinta:1.95
  • Dielectric joogto ah: 30
  • Faahfaahinta Alaabta

    Xuduudaha farsamada

    GGG/SGGG/NGG Garnets waxaa loo isticmaalaa dareeraha epitaxy.SGGG substrates ayaa u heellan substrates for magneto-optical film.In qalabka isgaarsiinta indhaha, u baahan wax badan oo ka mid ah isticmaalka 1.3u iyo 1.5u go'doomin indhaha, waxa ka kooban xudunta ah waa YIG ama BIG film. la geliyay goob birlab ah.
    Substrate-ka SGGG wuxuu aad ugu fiican yahay koritaanka bismuth-ka lagu beddelay filimada epitaxial iron garnet, waa wax u wanaagsan YIG, BiYIG, GdBIG.
    Waa sifooyin jidheed iyo farsamo oo wanaagsan iyo xasilloonida kiimikada.
    Codsiyada:
    YIG, filim epitaxy BIG;
    Aaladaha Microwave;
    Beddelka GGG

    Guryaha:

    Halabuurka (Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12
    Dhismaha Crystal Kuub: a =12.480 Å,
    molecular wDielectric joogto ah 968,096
    Barta dhalaalka ~1730 oC
    Cufnaanta ~ 7.09 g/cm3
    Adag ~ 7.5 (bilood)
    Tusmada dib-u-celinta 1.95
    Dielectric joogto ah 30
    Taangiga qasaaraha korontada (10 GHz) ca.3.0 * 10_4
    Habka koritaanka Crystal Czochralski
    Jihada koritaanka Crystal <111>

    Qiyaasta Farsamada:

    Hanuuninta <111> <100> gudaha ± 15 arc min
    Wave Front Distortion <1/4 hir@632
    Dulqaadka dhexroorka ±0.05mm
    Dulqaadka dhererka ±0.2mm
    Chamfer 0.10mm@45º
    Fiican <1/10 mawjada at 633nm
    Isbarbar yaac <30 ilbiriqsi
    Si toos ah < 15 arc min
    Tayada dusha sare 10/5 xoqin / qod
    Bannaanka Daloolada >90%
    Cabirrada Weyn ee Crystals 2.8-76 mm dhexroorka