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  • KTP Crystal

    KTP Crystal

    Potassium Titanyle Arsenate (KTiOAsO4), ama KTA crystal, waa kiristaalo aan toos ahayn oo aad u fiican oo loogu talagalay codsiga Oscillation Optical Parametric (OPO).Waxay leedahay iskudhafyo indho-indhayn ah oo aan toos ahayn iyo koronto-optical optical, si weyn u yareeyey nuugista gobolka 2.0-5.0 µm, xagalka ballaaran iyo baaxadda heerkulka, joogtooyinka dielectric hooseeya.

  • Cr2+: ZnSe

    Cr2+: ZnSe

    Cr²+:ZnSe nuucyada saturable-ka ah (SA) ayaa ah agabka ugu habboon ee loo adeegsado Q-wareejinta fibre-ammaanka ah ee indhaha iyo leysarka-adag ee ka shaqeeya baaxadda spectral ee 1.5-2.1 μm.

  • Sida Crystal

    Sida Crystal

    Zinc Telluride waa unug kiimiko ah oo laba-jibaaran leh oo leh caanaha ZnTe.DIEN TECH waxay soo saartaa ZnTe crystal oo leh dhidibka crystal <110>, kaas oo ah shay ku habboon oo lagu dabaqo dammaanad qaadka garaaca garaaca terahertz iyada oo loo marayo hannaan indho-indhayn oo aan toos ahayn oo loo yaqaan hagaajinta indhaha iyadoo la adeegsanayo garaaca garaaca iftiinka sare ee subpicosecond.Unugyada ZnTe ee DIEN TECH waxay bixiyaan waa ka madax banaan yihiin cillado mataano ah.

  • Fe:ZnSe/Fe:ZnS

    Fe:ZnSe/Fe:ZnS

    Fe²+:ZnSe Ferrum doped zinc selenide saturable absorbers (SA) ayaa ah maaddooyinka ugu habboon ee Q-wareegayaasha leysarka-adag ee ka shaqeeya baaxadda spectral ee 2.5-4.0 μm.

  • PPKTP Cystals

    PPKTP Cystals

    Potassium titanyl phosphate (PPKTP) oo si isdaba joog ah loo dhajiyay waa kiristaalo aan toos ahayn oo koronto leh oo leh qaab dhismeed gaar ah oo fududeeya beddelka soo noqnoqda wax ku ool ah iyada oo loo marayo isbarbardhig-waji-ku-habboon (QPM).
  • HgGa2S4 Crystal

    HgGa2S4 Crystal

    Qiimaha sare ee heerka dhaawaca laysarka iyo hufnaanta beddelka ayaa u oggolaanaya isticmaalka Mercury Thiogallate HgGa2S4(HGS) kiristaalo aan toos ahayn oo loogu talagalay labanlaabida soo noqnoqda iyo OPO/OPA ee hirarka dhererka u dhexeeya 1.0 ilaa 10 µm.Waxaa la aasaasay in SHG hufnaanta CO2shucaaca laysarka ee dhererka 4 mm HgGa2S4element waa qiyaastii 10% (mudada garaaca garaaca 30 ns, cufnaanta shucaaca 60MW/cm2).Waxtarka beddelka sare iyo baaxadda ballaaran ee hagaajinta mowjadda dhererka shucaaca ayaa u oggolaanaysa in la filayo in walxahan ay la tartami karaan AgGaS2, AgGaSe2, ZnGeP2iyo kiristaalo GaSe in kasta oo ay jirto dhibka weyn ee habka koritaanka crystals size weyn.

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