Crystals aan toos ahayn

Hababka korriinka oo ay ku jiraan toosan iyo toosan, agabkan (ZnGeP2, AgGaS2, AgGaSe2, GaSe, KTA, KTP, BIBO, LBO, BBO) ayaa la heli karaa oo leh cabbirro iyo hanuunin caadi ah.Qaar ka mid ah kuwan, oo leh sifooyin isugeyn weyn oo aan toos ahayn iyo cabbirro gaar ah oo aan bixinay ayaa si ballaaran loogu isticmaalaa SHG, THG iyo Mid-infrared OPO, nidaamyada OPA, iwm. Alaabooyinka waxaa lagu keeni karaa ama la'aanteed Aluminium Aluminium ah.

GaSe Crystal

Gallium Selenide (GaSe) oo aan toos ahayn oo hal crystal ah, oo isku daraysa isku xidhe weyn oo aan toos ahayn, heer dhaawac sare ah iyo kala duwanaansho hufan oo ballaadhan.Waa shay aad ugu habboon SHG bartamaha-IR.
ZGP(ZnGeP2) Crystals

Kiristaalo ZGP oo haysta iskudhafyo waaweyn oo aan toos ahayn (d36=75pm/V), kala duwanaansho hufnaan infrared ballaaran (0.75-12μm), kulaylka sare (0.35W/(cm · K)), heerka waxyeelada laysarka sare (2-5J/cm2) iyo si fiican u makiinado hantida, crystal ZnGeP2 waxaa loogu yeedhi jiray boqorka infrared kiristaalo indho aan toos ahayn oo weli ah wax beddelka ugu fiican ee soo noqnoqda ee awoodda sare, la hagaajin karo jiilka laser infrared.Waxaan bixin karnaa tayada sare ee indhaha iyo dhexroorka ZGP kiristaalo oo leh isugeyn aad u hooseeya oo nuugista α <0.05 cm-1 hababka.
AGSe(AgGaSe2) Crystals

AGseKiristaalo AgGaSe2 waxay leeyihiin cidhifyada 0.73 iyo 18 µm.Xajmiga gudbinta faa'iidada leh (0.9-16 µm) iyo awoodda isbarbardhigga wejiga ballaaran waxay siinaysaa awood aad u wanaagsan codsiyada OPO marka ay ku shubaan noocyo kala duwan oo leysarka ah.Ku-habaynta gudaha 2.5-12 µm ayaa la helay marka lagu shubayo Ho:YLF laser at 2.05 µm;iyo sidoo kale hawlgalka iswaafajinta aan muhiimka ahayn (NCPM) ee gudaha 1.9-5.5 µm marka lagu shubayo 1.4-1.55 µm.AgGaSe2 (AgGaSe2) ayaa lagu muujiyay inuu yahay soo noqnoqda wax ku ool ah oo labanlaabaya crystals CO2 lasers shucaaca.
AGS (AgGaS2) crystals

AGS waa hufan laga bilaabo 0.50 ilaa 13.2 µm.In kasta oo isku-dheellitirkeeda indho-indheynta aan tooska ahayn uu yahay kan ugu hooseeya ee ka mid ah kiristaalo infrared-ka ee la sheegay, daah-furnaanta hirarka gaaban ee dhererka sare ee 550 nm ayaa loo adeegsaday OPO-yada ay ku shubto Nd:YAG laser;Tijaabooyin isku dhafan oo kala duwan oo badan oo kala duwan oo isku dhafan oo leh diode, Ti: Sapphire, Nd: YAG iyo IR dheeha leysarka oo daboolaya kala duwanaanta 3-12 µm;Nidaamyada cabbiraadda infrared toos ah, iyo SHG ee CO2 laser.Taarikada khafiifka ah ee AgGaS2 (AGS) waxay caan ku yihiin jiilka garaaca wadnaha ee ultrashort ee dhexda IR kala duwanaanshaha jiilka soo noqnoqda ee isticmaalaya garaaca hirarka hirarka NIR.
BGse(BaGa4Se7) Crystals

Karistaanka tayada sare leh ee BGse (BaGa4Se7) waa analoogga selenide ee isku dhafka chalcogenide BaGa4S7, kaas oo qaab-dhismeedkiisa orthorhombic lagu aqoonsaday 1983 iyo saamaynta IR NLO ayaa la soo sheegay 2009, waa kiristaalo cusub oo IR NLO ah.Waxaa lagu helay farsamada Bridgman-Stockbarger.crystal Tani waxay muujinaysaa gudbinta sare ee baaxadda ballaaran ee 0.47-18 μm, marka laga reebo ugu sarreeya nuugista oo ku saabsan 15 μm.
BGGse(BaGa2GeSe6) Crystals

Crystal BaGa2GeSe6 waxay leedahay heer sare oo waxyeelo indhaha ah (110 MW/cm2), kala duwanaansho daah-furnaan ballaaran (laga bilaabo 0.5 ilaa 18 μm) iyo mid aan toos ahayn (d11 = 66 ± 15 pm / V), taas oo ka dhigaysa crystal-kan mid aad u soo jiidasho leh isu beddelka inta jeer ee shucaaca laysarka u beddelo (ama gudaha) xadka IR-dhexe.