Crystals LGS

La3Ga5SiO14 crystal (LGS crystal) waa shay aan toos ahayn oo indho-indhayn ah oo leh heer-burbur sare, koronto-muuqaal sare iyo wax-qabad koronto-optical oo aad u fiican.LGS crystal waxaa iska leh qaab dhismeedka nidaamka trigonal, isugeynta ballaadhinta kulaylka yar, ballaarinta kulaylka anisotropy of crystal waa daciif, heerkulka xasiloonida heerkulka sare waa wanaagsan yahay (ka fiican SiO2), oo leh laba electro madax-bannaan - coefficients indhaha ayaa u fiican sida kuwaBBOKiristaalo.


  • Foomka Kiimikada:La3Ga5SiQ14
  • Cufnaanta:5.75g/cm3
  • Meesha dhalaalaysa:1470 ℃
  • Xadka Hufnaanta:242-3200nm
  • Tusmada Dib-u-celinta:1.89
  • Isku xidhka Electro-Optic:γ41=1.8pm/V,γ11=2.3pm/V
  • iska caabin1.7x1010Ω.cm
  • Isku xidhka Balaadhinta kulaylka:α11=5.15x10-6/K(⊥Z-dhidibka);α33=3.65x10-6/K(∥Z-dhidibka)
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    La3Ga5SiO14 crystal (LGS crystal) waa shay aan toos ahayn oo indho-indhayn ah oo leh heer-burbur sare, koronto-muuqaal sare iyo wax-qabad koronto-optical oo aad u fiican.LGS crystal waxaa iska leh qaab dhismeedka nidaamka trigonal, isugeynta ballaadhinta kulaylka yar, ballaarinta kulaylka anisotropy of crystal waa daciif, heerkulka xasiloonida heerkulka sare waa wanaagsan yahay (ka fiican SiO2), oo leh laba electro- madax-bannaan coefficients indhaha ayaa u fiican sida kuwa BBO KiristaaloIsku-xireyaasha korantada-optic-ga waxay ku xasilan yihiin heerkul ballaaran oo kala duwan.Karistanku waxa uu leeyahay sifooyin farsamo oo wanaagsan, ma kala go'o, ma laha dhayalsi, xasilooni jidheed oo waxa uu leeyahay waxqabad dhamaystiran oo aad u wanaagsan.LGS crystal leeyahay band gudbinta ballaaran, ka 242nm-3550nm uu leeyahay heerka gudbinta sare.Waxa loo isticmaali karaa habaynta EO iyo EO Q-Switchs.

    LGS crystal waxay leedahay codsiyo kala duwan oo kala duwan: marka lagu daro saamaynta piezoelectric, saamaynta wareegga indhaha, wax qabadkeeda elektiroonigga ah sidoo kale waa mid aad u sarreeya, LGS Pockels Cells waxay leeyihiin soo noqnoqoshada sare ee soo noqnoqda, qaybta weyn ee daloolka, xajmiga garaaca wadnaha cidhiidhi ah, awood sare, ultra Heerkulka hooseeya iyo xaaladaha kale waxay ku habboon yihiin LGS crystal EO Q -switch.Waxaan codsanay isku-dhafka EO ee γ 11 si loo sameeyo unugyada LGS Pockels, waxaanan doorannay saamigeeda dhinac weyn si loo yareeyo korantada nuska ah ee unugyada Electro-optical LGS, taas oo ku habboon hagaajinta korantada indhaha ee dhammaan - Solid-state leysarka oo leh heerar awood sare leh oo soo noqnoqda.Tusaale ahaan, waxaa lagu dabaqi karaa LD Nd: YVO4 laser-state adag oo lagu shubay koronto dhexdhexaad ah iyo tamar ka badan 100W, oo leh heerka ugu sarreeya ilaa 200KHZ, wax soo saarka ugu sarreeya ilaa 715w, ballaca garaaca wadnaha ilaa 46ns, joogto ah wax soo saarka ilaa ku dhawaad ​​10w, iyo heerka dhaawaca indhaha ayaa 9-10 jeer ka sarreeya kan kristal LiNbO3.1/2 danabka hirarka iyo 1/4 danabka hirarka ayaa ka hooseeya kuwa dhexroorka isku midka ah ee Unugyada Pockels BBO, iyo qiimaha alaabada iyo isku-ururinta ayaa ka hooseeya kuwa dhexroorka isku midka ah ee RTP Pockels Cells.Marka la barbar dhigo Unugyada Pockels DKDP, waa kuwo aan xal ahayn waxayna leeyihiin xasillooni heerkul wanaagsan.LGS Electro-optical Unugyada waxaa loo isticmaali karaa deegaan qallafsan waxayna si fiican u qaban karaan codsiyo kala duwan.

    Foomamka Kiimikada La3Ga5SiQ14
    Cufnaanta 5.75g/cm3
    Meesha dhalaalaysa 1470 ℃
    Kala duwanaanshaha daahfurnaanta 242-3200nm
    Tusmada Dib-u-celinta 1.89
    Isku-xireyaasha Electro-Optic γ41=1.8pm/V,γ11=2.3pm/V
    iska caabin 1.7×1010Ω.cm
    Isku xidhka Balaadhinta kulaylka α11=5.15×10-6/K(⊥Z-dhidibka);α33=3.65×10-6/K(∥Z- dhidibka)